QEB421TR【PDF 1/3 页】LED IR EMITTING 880NM 2-PLCC T/R

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QEB421

SURFACE MOUNT INFRARED

LIGHT EMITTING DIODE

PACKAGE DIMENSIONS

0.118 (3.0)

0.102 (2.6)

0.083 (2.1)

0.067 (1.7)

0.091 (2.3)

0.083 (2.1)

0.035 (0.9)

0.041 (0.1)

0.028 (0.7)

0.134 (3.4)

0.118 (3.0)

0.094 (2.4)

0.043 (1.1)

0.020 (0.5)

FEATURES

? Wavelength = 880 nm, AlGaAs

SCHEMATIC

ANODE

NOTES:

0.024 (0.6)

0.016 (0.4)

0.007 (.18)

0.005 (.12)

? Wide Emission Angle, 120 °

? Surface Mount PLCC-2 Package

? High Power

ANODE

CATHODE

1. Dimensions are in inches (mm)

2. Tolerance of ± .010 (.25) on all non nominal dimensions

unless otherwise specified.

ABSOLUTE MAXIMUM RATINGS

(T A = 25 ° C unless otherwise specified)

NOTES

Parameter

Operating Temperature

Storage Temperature

Soldering Temperature (Flow) (2,3)

Continuous Forward Current

Reverse Voltage

Peak Forward Current (4)

Symbol

T opr

T stg

T sol

I F

V R

I FM

Rating

-55 to +100

-55 to +100

260 for 10 sec

100

5

1.75

Unit

° C

° C

° C

mA

V

A

1. Derate power dissipation linearly

2.4 mW/ ° C above 25 ° C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols

are recommended as cleaning

agents.

4. Pulse conditions; tp = 100 μs,

T = 10 ms.

Power

Dissipation (1)

P D

180

mW

ELECTRICAL / OPTICAL CHARACTERISTICS

(T A =25°C)

PARAMETER

Peak Emission Wavelength

Spectral Bandwidth

Emission Angle

Forward Voltage

TEST CONDITIONS

I F = 100 mA

I F = 100 mA

I F = 100 mA

I F = 100 mA, tp = 20 ms

SYMBOL

P

V F

MIN.

—

—

—

—

TYP.

880

80

120

1.5

MAX.

—

—

—

1.8

UNITS

nm

nm

Deg.

V

I F = 1 A, tp = 100 μs

—

3.0

3.8

Reverse Current

Radiant Intensity

V R = 5 V

I F = 100 mA, tp = 20 ms

I R

I e

—

4

—

—

1

8

μA

mW/sr

I F = 1 A, tp = 100 μs

—

48

—

Radiant Flux

Temp. Coeff. of I E

Temp. Coeff. of V F

Temp. Coeff. of

Rise Time

Fall Time

I F = 100 mA, tp = 20 ms

I F = 100 mA

I F = 100 mA

I F = 100 mA

I F = 100 mA

e

T CI

T CV

T C

t r

t f

—

—

—

—

—

—

10

-0.5

-4

0.25

—

—

—

—

—

—

1

1

mW

%/K

mV/K

nm/K

μs

μs

? 2001 Fairchild Semiconductor Corporation

DS300385 2/26/01

1 OF 3

www.fairchildsemi.com

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